V35DM120-M3/I

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DIODE SCHOTTKY 120V 6.3A TO263AC

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Discrete Semiconductor Products

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DIODE SCHOTTKY 120V 6.3A TO263AC

Technical Specifications

Parameters and characteristics for this part

Specification	V35DM120-M3/I

Current - Average Rectified (Io)	6.3 A
Current - Reverse Leakage @ Vr	1.2 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), Variant, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AC (SMPD)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Qualification	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Grade	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division V35DM120HM3/I	AEC-Q101	-40 °C	175 ░C	200 mA 500 ns	Schottky	1.05 V	Automotive	6.3 A	1.2 mA	D2PAK (2 Leads + Tab) TO-263-3 Variant	Surface Mount	120 V	TO-263AC (SMPD)
Vishay General Semiconductor - Diodes Division V35DM120-M3/I		-40 °C	175 ░C	200 mA 500 ns	Schottky	1.05 V		6.3 A	1.2 mA	D2PAK (2 Leads + Tab) TO-263-3 Variant	Surface Mount	120 V	TO-263AC (SMPD)

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General part information

Diode 120 V 6.3A Surface Mount TO-263AC (SMPD)

Technical documentation and resources