IXTT34N65X2HV
Active650V 34A 96MΩ@10V,34A 3V 1 N-CHANNEL MOSFETS ROHS
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IXTT34N65X2HV
Active650V 34A 96MΩ@10V,34A 3V 1 N-CHANNEL MOSFETS ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTT34N65X2HV |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268AA, TO-268-3 |
| Power Dissipation (Max) [Max] | 540 W |
| Rds On (Max) @ Id, Vgs | 96 mOhm |
| Supplier Device Package | TO-268HV (IXTT) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTT34N65X2HV Series
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources