Discrete Semiconductor Products

ES3BHE3_A/H

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DIODE GEN PURP 100V 3A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	ES3BHE3_A/H

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If	Qualification	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Capacitance @ Vr, F	Grade	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division ES3BHE3_A/I	DO-214AB SMC	900 mV	AEC-Q101	3 A	30 ns	DO-214AB (SMC)	45 pF	Automotive	200 mA 500 ns	150 °C	-55 °C	Surface Mount	Standard	10 µA	100 V
Vishay General Semiconductor - Diodes Division ES3BHE3_A/H	DO-214AB SMC	900 mV	AEC-Q101	3 A	30 ns	DO-214AB (SMC)	45 pF	Automotive	200 mA 500 ns	150 °C	-55 °C	Surface Mount	Standard	10 µA	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources