Discrete Semiconductor Products

SQJ418EP-T2_GE3

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N-CHANNEL 100-V (D-S) 175C MOSFET

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Discrete Semiconductor Products

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N-CHANNEL 100-V (D-S) 175C MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ418EP-T2_GE3

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SQJ418EP-T2_GE3	10 V	MOSFET (Metal Oxide)	N-Channel	100 V	Surface Mount	PowerPAK® SO-8	1700 pF	35 nC	68 W	-55 °C	175 ░C	48 A	PowerPAK® SO-8	20 V	3.5 V	14 mOhm

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General part information

N-Channel 100 V 48A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources