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8-PowerTDFN
Discrete Semiconductor Products

NVMFWS0D4N04XMT1G

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 509 A, 0.42MΩ

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8-PowerTDFN
Discrete Semiconductor Products

NVMFWS0D4N04XMT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 509 A, 0.42MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFWS0D4N04XMT1G
Current - Continuous Drain (Id) @ 25°C519 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]138 nC
Input Capacitance (Ciss) (Max) @ Vds8550 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]197 W
Rds On (Max) @ Id, Vgs0.42 mOhm
Supplier Device Package8-DFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.66
10$ 3.79
100$ 2.72
500$ 2.27
Digi-Reel® 1$ 5.66
10$ 3.79
100$ 2.72
500$ 2.27
Tape & Reel (TR) 1500$ 2.23
NewarkEach (Supplied on Full Reel) 1$ 2.81
3000$ 2.68
6000$ 2.51
12000$ 2.33
18000$ 2.24
30000$ 2.20
ON SemiconductorN/A 1$ 1.99

Description

General part information

NVMFWS0D4N04XM Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.