Specification	EMH2314-TL-H

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.2 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	8-EMH
Technology	MOSFET (Metal Oxide)

EMH2314 Series

Power MOSFET, -12V, 37mΩ, -5A, Dual P-Channel

Part	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package
ON Semiconductor EMH2314-TL-H	150 °C	5 A	Logic Level Gate	12 nC	Surface Mount	37 mOhm	2 P-Channel	1.2 W	1300 pF	12 V	MOSFET (Metal Oxide)	8-EMH

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

EMH2314 is a Power MOSFET, -12V, 37mΩ, -5A, Dual P-Channel for General-Purpose Switching Device Applications.