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MMBT2222AWT1G
Discrete Semiconductor Products

NSVMUN5134T1G

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ON Semiconductor

PNP BIPOLAR DIGITAL TRANSISTOR (BRT)

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MMBT2222AWT1G
Discrete Semiconductor Products

NSVMUN5134T1G

Active
ON Semiconductor

PNP BIPOLAR DIGITAL TRANSISTOR (BRT)

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVMUN5134T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80 hFE
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Power - Max [Max]202 mW
QualificationAEC-Q101
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
Digi-Reel® 1$ 0.19
Tape & Reel (TR) 3000$ 0.04
6000$ 0.03
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.02
150000$ 0.02
300000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MUN5134DW1 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.