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TO-220-3
Discrete Semiconductor Products

MTP3055VL

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 12 A, 0.1 OHM, TO-220AB, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+3
TO-220-3
Discrete Semiconductor Products

MTP3055VL

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 12 A, 0.1 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+3

Technical Specifications

Parameters and characteristics for this part

SpecificationMTP3055VL
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds570 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power Dissipation (Max)48 W
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)15 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.22
10$ 1.43
100$ 0.97
500$ 0.77
1000$ 0.71
2000$ 0.66
5000$ 0.63
NewarkEach 1$ 2.10
10$ 1.06
100$ 0.93
500$ 0.84
1600$ 0.80
3200$ 0.72
5600$ 0.69
ON SemiconductorN/A 1$ 0.67

Description

General part information

MTP3055VL Series

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.