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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBTA13LT3G

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ON Semiconductor

DARLINGTON TRANSISTOR, NPN, 3 PINS

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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBTA13LT3G

Active
ON Semiconductor

DARLINGTON TRANSISTOR, NPN, 3 PINS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBTA13LT3G
Current - Collector (Ic) (Max) [Max]300 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]10000
Frequency - Transition125 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.20
10$ 0.14
100$ 0.07
500$ 0.06
1000$ 0.04
2000$ 0.03
5000$ 0.03
Digi-Reel® 1$ 0.20
10$ 0.14
100$ 0.07
500$ 0.06
1000$ 0.04
2000$ 0.03
5000$ 0.03
Tape & Reel (TR) 10000$ 0.03
30000$ 0.03
50000$ 0.02
100000$ 0.02
250000$ 0.02
NewarkEach (Supplied on Full Reel) 6000$ 0.03
18000$ 0.03
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMBTA13L Series

This NPN Bipolar Darlington Transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.