Specification	MMBT6520LT3G

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	225 mW
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

NSVMMBT6520 Series

High Voltage PNP Bipolar Transistor

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Grade	Qualification
ON Semiconductor MMBT6520LT3G	SC-59 SOT-23-3 TO-236-3	500 mA	20	Surface Mount	PNP	1 V	-55 °C	150 °C	SOT-23-3 (TO-236)	50 nA	225 mW	350 V	200 MHz
ON Semiconductor NSVMMBT6520LT1G	SC-59 SOT-23-3 TO-236-3	500 mA	20	Surface Mount	PNP	1 V	-55 °C	150 °C	SOT-23-3 (TO-236)	50 nA	225 mW	350 V	200 MHz	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NSVMMBT6520 Series

The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing