Specification	NDT03N40ZT3G

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	3.4 Ohm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NDT03N40Z Series

N-Channel Power MOSFET, 400 V, 3.4 OHM

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
ON Semiconductor NDT03N40ZT3G	400 V	500 mA	4.5 V	N-Channel	140 pF	TO-261-4 TO-261AA	Surface Mount	30 V	6.6 nC	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	SOT-223 (TO-261)	3.4 Ohm	2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel Power MOSFET, 400 V, 3.4 OHM

Technical documentation and resources