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ONSEMI BAS40LT1G
Discrete Semiconductor Products

MMBT5088LT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 30 V, 50 MHZ, 225 MW, 50 MA, 50 ROHS COMPLIANT: YES

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DocumentsProduct Change Notice ENDatasheet+2
ONSEMI BAS40LT1G
Discrete Semiconductor Products

MMBT5088LT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 30 V, 50 MHZ, 225 MW, 50 MA, 50 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice ENDatasheet+2

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT5088LT1G
Current - Collector (Ic) (Max) [Max]50 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]300 hFE
Frequency - Transition50 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
Digi-Reel® 1$ 0.19
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
Tape & Reel (TR) 3000$ 0.04
6000$ 0.03
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Full Reel) 3000$ 0.04
6000$ 0.04
12000$ 0.04
ON SemiconductorN/A 1$ 0.02

Description

General part information

NSVMMBT5088 Series

This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.