Specification	FCP650N80Z

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	162 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FCP650N80Z Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220

Part	FET Type	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
ON Semiconductor FCP650N80Z	N-Channel	TO-220-3	4.5 V	162 W	10 A	800 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	10 V	650 mOhm	Through Hole	35 nC	TO-220

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.37

Description

General part information

FCP650N80Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.