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TO-264-5
Discrete Semiconductor Products

NJL0302DG

Active
ON Semiconductor

TRANSISTOR,BJT,PNP,260V V(BR)CEO,15A I(C),TO-264 ROHS COMPLIANT: YES

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TO-264-5
Discrete Semiconductor Products

NJL0302DG

Active
ON Semiconductor

TRANSISTOR,BJT,PNP,260V V(BR)CEO,15A I(C),TO-264 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNJL0302DG
Current - Collector (Ic) (Max) [Max]15 A
Current - Collector Cutoff (Max) [Max]10 µA
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-264-5
Power - Max [Max]180 W
Supplier Device PackageTO-264
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]260 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.51
25$ 3.81
100$ 3.17
500$ 2.66
1000$ 2.61
NewarkEach 50$ 3.94
100$ 3.42
250$ 2.86
500$ 2.78
ON SemiconductorN/A 1$ 2.78

Description

General part information

NJL0302D Series

The Bipolar Power Transistor has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. It can also be used in other applications as a transistor die protection device.