Discrete Semiconductor Products

BUK794R1-40BT,127

Obsolete

MOSFET N-CH 40V 75A TO220-5

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 75A TO220-5

Technical Specifications

Parameters and characteristics for this part

Specification	BUK794R1-40BT,127

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Temperature Sensing Diode
FET Type	N-Channel
Gate Charge (Max)	83 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	6808 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-5
Package Name	TO-220-5
Power Dissipation (Max)	272 W
Qualification	AEC-Q101
Rds On (Max)	4.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Grade	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	FET Feature	Power Dissipation (Max)	Package Name	Input Capacitance (Ciss) (Max)	Qualification	FET Type	Mounting Type
NXP USA Inc. BUK7909-75AIE,127
NXP USA Inc. BUK794R1-40BT,127	MOSFET (Metal Oxide)	10 V	40 V	TO-220-5	Automotive	83 nC	4 V	20 V	4.1 mOhm	-55 °C	175 °C	75 A	Temperature Sensing Diode	272 W	TO-220-5	6808 pF	AEC-Q101	N-Channel	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 40 V 75A (Tc) 272W (Tc) Through Hole TO-220-5

Technical documentation and resources

No documents available