Discrete Semiconductor Products

RJK6025DPD-00#J2

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MOSFET N-CH 600V 1A MP3A

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Discrete Semiconductor Products

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MOSFET N-CH 600V 1A MP3A

Technical Specifications

Parameters and characteristics for this part

Specification	RJK6025DPD-00#J2

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	37.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	29.7 W
Rds On (Max) @ Id, Vgs	17.5 Ohm
Supplier Device Package	MP-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	FET Type	Package / Case	Supplier Device Package	Operating Temperature	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Renesas Electronics Corporation RJK6025DPD-00#J2	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	MP-3A	150 °C	600 V	MOSFET (Metal Oxide)	30 V	1 A	17.5 Ohm	10 V	29.7 W	Surface Mount	37.5 pF	5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 1A (Ta) 29.7W (Tc) Surface Mount MP-3A

Technical documentation and resources