Discrete Semiconductor Products

SI1308EDL-T1-BE3

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MOSFET N-CH 30V 1.5A/1.4A SC70-3

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Discrete Semiconductor Products

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MOSFET N-CH 30V 1.5A/1.4A SC70-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI1308EDL-T1-BE3

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.1 nC
Input Capacitance (Ciss) (Max) @ Vds	105 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	400 mW, 500 mW
Rds On (Max) @ Id, Vgs	132 mOhm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Supplier Device Package	Technology	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1308EDL-T1-GE3	10 V	2.5 V	132 mOhm	1.5 V	4.1 nC	N-Channel	30 V	105 pF	12 V	SC-70 SOT-323	SC-70-3	MOSFET (Metal Oxide)	400 mW 500 mW	Surface Mount	1.4 A	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI1308EDL-T1-BE3			132 mOhm	1.5 V	4.1 nC	N-Channel	30 V	105 pF	12 V	SC-70 SOT-323	SC-70-3	MOSFET (Metal Oxide)	400 mW 500 mW	Surface Mount	1.4 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SC-70-3

Technical documentation and resources