Specification	BM3G005MUV-LBE2

Fault Protection	Over Temperature, UVLO
Features	Power Good, 5V Regulated Output
Input Type	Non-Inverting
Mounting Type	Wettable Flank, Surface Mount
Number of Outputs	1
Operating Temperature [Max]	105 ░C
Operating Temperature [Min]	-40 C
Output Configuration	Low Side
Output Type	N/P-Channel
Package / Case	46-VFQFN Exposed Pad
Ratio - Input:Output	1:1
Rds On (Typ)	50 mOhm
Supplier Device Package	VQFN046V8080
Switch Type	General Purpose
Voltage - Load	650 V
Voltage - Supply (Vcc/Vdd) [Max]	30 V
Voltage - Supply (Vcc/Vdd) [Min]	6.83 V

BM3G005MUV-LB Series

Nano Cap™, EcoGaN™, 650V 50mΩ 2MHz, GaN HEMT Power Stage IC

Part	Mounting Type	Number of Outputs	Package / Case	Fault Protection	Output Type	Supplier Device Package	Ratio - Input:Output	Input Type	Rds On (Typ)	Switch Type	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Output Configuration	Features	Voltage - Load
Rohm Semiconductor BM3G005MUV-LBE2	Surface Mount Wettable Flank	1	46-VFQFN Exposed Pad	Over Temperature UVLO	N/P-Channel	VQFN046V8080	1:1	Non-Inverting	50 mOhm	General Purpose	30 V	6.83 V	-40 C	105 ░C	Low Side	5V Regulated Output Power Good	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	998	$ 14.59
Newark	Each (Supplied on Cut Tape)	1	$ 14.65
		10	$ 11.89
		25	$ 11.07
		50	$ 10.58
		100	$ 10.14
		250	$ 9.64
		500	$ 9.21
		1000	$ 8.86

Description

General part information

BM3G005MUV-LB Series

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM3G005MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650 V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150 V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.