Discrete Semiconductor Products

PJA3440-AU_R1_000A1

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SOT-23, MOSFET

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Discrete Semiconductor Products

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SOT-23, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3440-AU_R1_000A1

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	42 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Grade
Panjit International Inc. PJA3440_R1_00001	40 V	SOT-23	MOSFET (Metal Oxide)	20 V	4.8 nC	N-Channel	1.25 W	2.5 V	42 mOhm	4.3 A	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	Surface Mount	410 pF	-55 °C	150 °C
Panjit International Inc. PJA3440-AU_R1_000A1	40 V	SOT-23	MOSFET (Metal Oxide)	20 V	4.8 nC	N-Channel	1.25 W	2.5 V	42 mOhm	4.3 A	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	Surface Mount	410 pF	-55 °C	150 °C	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 4.3A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources