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SOT-23
Discrete Semiconductor Products

BAL99-E3-18

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 70V 250MA SOT23-3

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SOT-23
Discrete Semiconductor Products

BAL99-E3-18

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 70V 250MA SOT23-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBAL99-E3-18
Capacitance @ Vr, F1.5 pF
Current - Average Rectified (Io)250 mA
Current - Reverse Leakage @ Vr2.5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)6 ns
Speed200 mA, 500 ns
Supplier Device PackageSOT-23-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]70 V
Voltage - Forward (Vf) (Max) @ If [Max]1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.03
30000$ 0.03
50000$ 0.02
100000$ 0.02
250000$ 0.02

Description

General part information

BAL99 Series

Diode 70 V 250mA Surface Mount SOT-23-3

Documents

Technical documentation and resources

No documents available