FDU5N50NZTU

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFETTM II, 500 V, 4 A, 1.5 Ω, IPAK

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DocumentsDatasheet Package Drawing-369AR-DPAK3 (IPAK)+1

Discrete Semiconductor Products

FDU5N50NZTU

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFETTM II, 500 V, 4 A, 1.5 Ω, IPAK

Deep-Dive with AI

DocumentsDatasheet Package Drawing-369AR-DPAK3 (IPAK)+1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDU5N50NZTU

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	62 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	DPACK3 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

FDU5N50NZTU Series

Power MOSFET, N-Channel, UniFETTM II, 500 V, 4 A, 1.5 Ω, IPAK

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDU5N50NZTU	1.5 Ohm	5 V	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	DPACK3 (IPAK)	10 V	4 A	62 W	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	500 V	12 nC	25 V	440 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDU5N50NZTU Series

UniFETTMII MOSFET is ON Semiconductor Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.