Specification	NTMFS6H858NLT1G

Current - Continuous Drain (Id) @ 25°C	30 A, 8.7 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6 nC
Input Capacitance (Ciss) (Max) @ Vds	623 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.5 W, 42 W
Rds On (Max) @ Id, Vgs	19.5 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMFS6H858NL Series

Power MOSFET 80V, 30A, 19.5 mOhm, Single N-Channel, SO8-FL.

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTMFS6H858NLT1G	20 V	6 nC	Surface Mount	3.5 W 42 W	19.5 mOhm	N-Channel	-55 °C	175 ░C	2 V	5-DFN (5x6)	8-SOFL	80 V	4.5 V 10 V	8-PowerTDFN 5 Leads	MOSFET (Metal Oxide)	8.7 A 30 A	623 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.