Discrete Semiconductor Products

PMT200EPEAX

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PMT200EPEA - 70 V, P-CHANNEL TRENCH MOSFET SC-73 4-PIN

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Discrete Semiconductor Products

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PMT200EPEA - 70 V, P-CHANNEL TRENCH MOSFET SC-73 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMT200EPEAX

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	70 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	822 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	167 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Qualification	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Grade	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PMT200EPEAX	-55 °C	150 °C	Surface Mount	70 V	MOSFET (Metal Oxide)	AEC-Q101	2.4 A	15.9 nC	4.5 V 10 V	P-Channel	3 V	TO-261-4 TO-261AA	SOT-223	167 mOhm	20 V	Automotive	822 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 70 V 2.4A (Ta) 800mW (Ta) Surface Mount SOT-223

Technical documentation and resources