IXTA60N20X4
ActiveDISCRETE MOSFET 60A 200V X4 TO263/ TUBE
Deep-Dive with AI
Search across all available documentation for this part.
IXTA60N20X4
ActiveDISCRETE MOSFET 60A 200V X4 TO263/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA60N20X4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 21 mOhm |
| Supplier Device Package | TO-263 (IXTA) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTA60N20X4 Series
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density.
Documents
Technical documentation and resources