Discrete Semiconductor Products

PJC7403_R1_00001

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20V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7403_R1_00001

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	165 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Drain to Source Voltage (Vdss)
Panjit International Inc. PJC7403_R1_00001	1 V	8 V	165 pF	SOT-323	P-Channel	2.2 nC	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	1.8 V 4.5 V	350 mW	SC-70 SOT-323	20 V

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General part information

P-Channel 20 V 700mA (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources