Discrete Semiconductor Products

SUP90N06-6M0P-E3

LTB

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 90A TO220AB

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DocumentsDatasheet IRLZ44

Discrete Semiconductor Products

SUP90N06-6M0P-E3

LTB

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 90A TO220AB

Deep-Dive with AI

DocumentsDatasheet IRLZ44

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SUP90N06-6M0P-E3

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	3.75 W, 272 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

SUP90 Series

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SUP90N08-7M7P-E3	TO-220-3	105 nC	4.5 V	7.7 mOhm	90 A	Through Hole	20 V	MOSFET (Metal Oxide)	4250 pF	N-Channel	75 V	TO-220AB	10 V	-55 °C	150 °C	3.75 W 208.3 W
Vishay General Semiconductor - Diodes Division SUP90N06-5M0P-E3	TO-220-3		4.5 V		90 A	Through Hole	20 V	MOSFET (Metal Oxide)	6190 pF	N-Channel	60 V	TO-220AB	10 V	-55 °C	175 ░C	3.75 W 300 W	160 nC
Vishay General Semiconductor - Diodes Division SUP90N06-6M0P-E3	TO-220-3		4.5 V		90 A	Through Hole	20 V	MOSFET (Metal Oxide)	4700 pF	N-Channel	60 V	TO-220AB	10 V	-55 °C	175 ░C	3.75 W 272 W	120 nC	6 mOhm
Vishay General Semiconductor - Diodes Division SUP90N08-6M8P-E3	TO-220-3	115 nC	4.5 V	6.8 mOhm	90 A	Through Hole	20 V	MOSFET (Metal Oxide)	4620 pF	N-Channel	75 V	TO-220AB	10 V	-55 °C	175 ░C	3.75 W 272 W
Vishay General Semiconductor - Diodes Division SUP90N04-3M3P-GE3	TO-220-3		2.5 V		90 A	Through Hole	20 V	MOSFET (Metal Oxide)	5286 pF	N-Channel	40 V	TO-220AB	4.5 V 10 V	-55 °C	150 °C	3.1 W 125 W	131 nC	3.3 mOhm
Vishay General Semiconductor - Diodes Division SUP90P06-09L-E3	TO-220-3		3 V		90 A	Through Hole	20 V	MOSFET (Metal Oxide)	9200 pF	P-Channel	60 V	TO-220AB	4.5 V 10 V	-55 °C	175 ░C	2.4 W 250 W	240 nC	9.3 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.02
		50	$ 2.40
		100	$ 2.05
		500	$ 1.82
		1000	$ 1.56
		2000	$ 1.47
		5000	$ 1.41

Description

General part information

SUP90 Series

N-Channel 60 V 90A (Tc) 3.75W (Ta), 272W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources

Datasheet

IRLZ44

Datasheet