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Discrete Semiconductor Products
FGA30T65SHD
ObsoleteON Semiconductor
IGBT, 650 V, 30 A FIELD STOP TRENCH
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Discrete Semiconductor Products
FGA30T65SHD
ObsoleteON Semiconductor
IGBT, 650 V, 30 A FIELD STOP TRENCH
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FGA30T65SHD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 54.7 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 238 W |
| Reverse Recovery Time (trr) | 31.8 ns |
| Supplier Device Package | TO-3PN |
| Switching Energy | 167 µJ, 598 µJ |
| Td (on/off) @ 25°C | 52.8 ns |
| Td (on/off) @ 25°C | 14.4 ns |
| Test Condition | 400 V, 30 A, 6 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FGA30T65SHD Series
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rdgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Documents
Technical documentation and resources