
Discrete Semiconductor Products
MJD340TF
ObsoleteON Semiconductor
0.5 A, 300 V HIGH VOLTAGE NPN BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
MJD340TF
ObsoleteON Semiconductor
0.5 A, 300 V HIGH VOLTAGE NPN BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD340TF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 15 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJD340T Series
The PNP Bipolar Power Transistor is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
Documents
Technical documentation and resources