IXTH04N300P3HV
ActiveDISC MOSFET N-CH STD-POLAR3 TO-247AD/ TUBE
Deep-Dive with AI
Search across all available documentation for this part.
IXTH04N300P3HV
ActiveDISC MOSFET N-CH STD-POLAR3 TO-247AD/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTH04N300P3HV |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 400 mA |
| Drain to Source Voltage (Vdss) | 3000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 283 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 Variant |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) @ Id, Vgs | 190 Ohm |
| Supplier Device Package | TO-247HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTH04N300P3HV Series
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density
Documents
Technical documentation and resources