Discrete Semiconductor Products

SSM3K01T(TE85L,F)

Obsolete

MOSFET N-CH 30V 3.2A TSM

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 3.2A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K01T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	152 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Technology	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)
Toshiba Semiconductor and Storage SSM3K01T(TE85L,F)	TSM	120 mOhm	152 pF	Surface Mount	MOSFET (Metal Oxide)	150 °C	3.2 A	1.25 W	SC-59 SOT-23-3 TO-236-3	N-Channel	4 V	2.5 V	30 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 3.2A (Ta) 1.25W (Ta) Surface Mount TSM

Technical documentation and resources

No documents available