
Discrete Semiconductor Products
MJD42C1G
ObsoleteON Semiconductor
TRANS GP BJT PNP 100V 6A 1750MW 3-PIN(3+TAB) IPAK TUBE

Discrete Semiconductor Products
MJD42C1G
ObsoleteON Semiconductor
TRANS GP BJT PNP 100V 6A 1750MW 3-PIN(3+TAB) IPAK TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD42C1G |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power - Max [Max] | 1.75 W |
| Supplier Device Package | IPAK |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.37 | |
| 75 | $ 0.60 | |||
| 150 | $ 0.54 | |||
Description
General part information
NJVMJD42 Series
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD41C (NPN) and MJD42C (PNP) are complementary devices.
Documents
Technical documentation and resources