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onsemi-MJD42C1G GP BJT Trans GP BJT PNP 100V 6A 1750mW 3-Pin(3+Tab) IPAK Tube
Discrete Semiconductor Products

MJD42C1G

Obsolete
ON Semiconductor

TRANS GP BJT PNP 100V 6A 1750MW 3-PIN(3+TAB) IPAK TUBE

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onsemi-MJD42C1G GP BJT Trans GP BJT PNP 100V 6A 1750mW 3-Pin(3+Tab) IPAK Tube
Discrete Semiconductor Products

MJD42C1G

Obsolete
ON Semiconductor

TRANS GP BJT PNP 100V 6A 1750MW 3-PIN(3+TAB) IPAK TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD42C1G
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Frequency - Transition3 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]1.75 W
Supplier Device PackageIPAK
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.37
75$ 0.60
150$ 0.54

Description

General part information

NJVMJD42 Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD41C (NPN) and MJD42C (PNP) are complementary devices.

Documents

Technical documentation and resources