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PMN48XPAX

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MOSFET P-CH 20V 4.1A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET P-CH 20V 4.1A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN48XPAX

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	6.25 W, 530 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

Part	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Qualification	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PMN48XPA2X	SC-74 SOT-457	1.3 V	49 mOhm	MOSFET (Metal Oxide)	679 pF	P-Channel	AEC-Q101	4.4 A	Surface Mount	10 nC	20 V	12 V	6-TSOP	7.5 W 660 mW	-55 °C	175 ░C	Automotive	2.5 V	8 V
Freescale Semiconductor - NXP PMN48XPAX	SC-74 SOT-457	1.25 V	55 mOhm	MOSFET (Metal Oxide)		P-Channel	AEC-Q101	4.1 A	Surface Mount		20 V	12 V	6-TSOP	6.25 W 530 mW	-55 °C	150 °C	Automotive			1000 pF	13 nC	2.5 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 4.1A (Ta) 530mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP

Technical documentation and resources