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TO-251AA
Discrete Semiconductor Products

IRFU214

Obsolete

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TO-251AA
Discrete Semiconductor Products

IRFU214

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFU214
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC
Input Capacitance (Ciss) (Max) @ Vds140 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)25 W, 2.5 W
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageTO-251AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRFU2 Series

N-Channel 250 V 2.2A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA

Documents

Technical documentation and resources

No documents available