Discrete Semiconductor Products
DMN3032LFDBQ-7
ActiveDiodes Inc
TRANSISTOR MOSFET ARRAY DUAL N-CH 30V 6.2A 6-PIN UDFN2020 T/R
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Discrete Semiconductor Products
DMN3032LFDBQ-7
ActiveDiodes Inc
TRANSISTOR MOSFET ARRAY DUAL N-CH 30V 6.2A 6-PIN UDFN2020 T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3032LFDBQ-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 6.2 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type B) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2 V |
DMN3032LFDBQ Series
Dual N-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Configuration | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 1.8 W | 4.5 V 10 V | 5.6 A | 20 V | MOSFET (Metal Oxide) | 30 V | 2 V | Surface Mount | TO-261-4 TO-261AA | N-Channel | SOT-223-3 | 498 pF | 29 mOhm | -55 °C | 150 °C | |||
 Diodes Inc | 6.2 A | MOSFET (Metal Oxide) | 30 V | 2 V | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | 500 pF | 30 mOhm | -55 °C | 150 °C | 10.6 nC | 2 N-Channel (Dual) | 1 W | ||||
Diodes Inc | 6.2 A | MOSFET (Metal Oxide) | 30 V | 2 V | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | 500 pF | 30 mOhm | -55 °C | 150 °C | 10.6 nC | 2 N-Channel (Dual) | 1 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.38 | |
| 10 | $ 0.33 | |||
| 100 | $ 0.23 | |||
| 500 | $ 0.18 | |||
| 1000 | $ 0.15 | |||
| Digi-Reel® | 1 | $ 0.38 | ||
| 10 | $ 0.33 | |||
| 100 | $ 0.23 | |||
| 500 | $ 0.18 | |||
| 1000 | $ 0.15 | |||
| Tape & Reel (TR) | 3000 | $ 0.15 | ||
Description
General part information
DMN3032LFDBQ Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources