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TO-92-3 Formed Leads
Discrete Semiconductor Products

BC636TA

Obsolete
ON Semiconductor

TRANSISTOR SILICON PLASTIC PNP

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TO-92-3 Formed Leads
Discrete Semiconductor Products

BC636TA

Obsolete
ON Semiconductor

TRANSISTOR SILICON PLASTIC PNP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBC636TA
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition100 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-226-3, TO-92-3
Power - Max [Max]1 W
Supplier Device PackageTO-92-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.34
10$ 0.20
100$ 0.13
500$ 0.10
1000$ 0.08
Tape & Box (TB) 2000$ 0.08
4000$ 0.07
6000$ 0.06
10000$ 0.06
14000$ 0.06
20000$ 0.05
50000$ 0.05
100000$ 0.05
200000$ 0.04

Description

General part information

BC636 Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.