Discrete Semiconductor Products

MER802T_T0_00601

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Panjit International Inc.

DIODE GEN PURP 200V 8A TO220AC

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Discrete Semiconductor Products

Active

Panjit International Inc.

DIODE GEN PURP 200V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MER802T_T0_00601

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr
Panjit International Inc. MER802FT_T0_00601	200 V	8 A	ITO-220AC	Through Hole	TO-220-2 Full Pack Isolated Tab	175 ░C	-55 C	200 mA 500 ns	Standard	950 mV	35 ns	80 pF	1 µA
Panjit International Inc. MER802T_T0_00601	200 V	8 A	TO-220AC	Through Hole	TO-220-2	175 ░C	-55 C	200 mA 500 ns	Standard	950 mV	35 ns	80 pF	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 8A Through Hole TO-220AC

Technical documentation and resources