Discrete Semiconductor Products

SICRD10650CT

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DIODE SIL CARBIDE 650V 5A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICRD10650CT

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Mounting Type	Current - Average Rectified (Io)	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
SMC Diode Solutions SICRD10650CT	SiC (Silicon Carbide) Schottky	0 ns	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	5 A	500 mA	DPAK	175 ░C	-55 °C	650 V	60 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 5A Surface Mount DPAK

Technical documentation and resources