Discrete Semiconductor Products

FDWS9408-F085

Obsolete

N-CHANNEL POWERTRENCH® MOSFET 40V, 80A, 1.8MΩ

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Discrete Semiconductor Products

Obsolete

N-CHANNEL POWERTRENCH® MOSFET 40V, 80A, 1.8MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDWS9408-F085

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	5150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	214 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel PowerTrench® MOSFET 40V, 20A, 5.8mΩ

Part	Vgs(th) (Max) @ Id	Package / Case	Configuration	Technology	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]
ON Semiconductor FDWS9420-F085	4 V	8-PowerTDFN	2 N-Channel (Dual)	MOSFET (Metal Oxide)	75 W	-55 °C	175 ░C	20 A	5.8 mOhm	Surface Mount	43 nC	8-PQFN (5x6)	40 V	2100 pF
ON Semiconductor FDWS9408-F085	4 V	8-PowerTDFN		MOSFET (Metal Oxide)		-55 °C	175 ░C		1.8 mOhm	Surface Mount	92 nC	Power56	40 V		10 V	5150 pF	20 V	N-Channel	214 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel PowerTrench®MOSFET 40 V, 20 A, 5.8 mΩ

Technical documentation and resources