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ONSEMI BAS40LT1G
Discrete Semiconductor Products

MMBFJ175LT1G

Active
ON Semiconductor

TRANSISTOR, JFET, P, 30V, SOT-23

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ONSEMI BAS40LT1G
Discrete Semiconductor Products

MMBFJ175LT1G

Active
ON Semiconductor

TRANSISTOR, JFET, P, 30V, SOT-23

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBFJ175LT1G
Current - Drain (Idss) @ Vds (Vgs=0)7 mA
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds11 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Resistance - RDS(On)125 Ohms
Supplier Device PackageSOT-23-3 (TO-236)
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.51
10$ 0.31
100$ 0.20
500$ 0.15
1000$ 0.13
Digi-Reel® 1$ 0.51
10$ 0.31
100$ 0.20
500$ 0.15
1000$ 0.13
Tape & Reel (TR) 3000$ 0.11
6000$ 0.10
9000$ 0.10
15000$ 0.09
21000$ 0.09
30000$ 0.08
75000$ 0.08
NewarkEach (Supplied on Cut Tape) 1$ 0.54
10$ 0.33
25$ 0.29
50$ 0.24
ON SemiconductorN/A 1$ 0.08

Description

General part information

MMBFJ175L Series

P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.