Discrete Semiconductor Products
QH8ME5TCR
ActiveRohm Semiconductor
MOSFET, N/P-CH, 100V, 2A, TSMT ROHS COMPLIANT: YES
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Discrete Semiconductor Products
QH8ME5TCR
ActiveRohm Semiconductor
MOSFET, N/P-CH, 100V, 2A, TSMT ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | QH8ME5TCR |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC, 19.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF, 590 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power - Max [Max] | 1.1 W |
| Rds On (Max) @ Id, Vgs | 202 mOhm, 270 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
QH8ME5 Series
QH8ME5 is a low on-resistance MOSFET ideal for Switching applications.
Documents
Technical documentation and resources