Discrete Semiconductor Products

AOK75B65H1

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IGBT 650V 75A TO-247

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Discrete Semiconductor Products

Active

IGBT 650V 75A TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	AOK75B65H1

Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Pulsed (Icm)	225 A
Gate Charge	109 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	556 W
Reverse Recovery Time (trr)	295 ns
Supplier Device Package	TO-247
Switching Energy	3.77 mJ, 2.04 mJ
Td (on/off) @ 25°C	175 ns, 47 ns
Test Condition	15 V, 75 A, 400 V, 4 Ohm
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Gate Charge	Test Condition	Switching Energy	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case
Alpha & Omega Semiconductor Inc. AOK75B65H1	47 ns 175 ns	225 A	2.4 V	150 A	109 nC	4 Ohm 15 V 75 A 400 V	2.04 mJ 3.77 mJ	Through Hole	295 ns	175 °C	-55 °C	556 W	650 V	TO-247	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 650 V 150 A 556 W Through Hole TO-247

Technical documentation and resources