Specification	KSD1691GS

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max	1.3 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

KSD1691 Series

Part	Transistor Type	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Current - Collector (Ic) (Max)	Operating Temperature
ON Semiconductor KSD1691YSTSTU	NPN	TO-126-3	Through Hole	300 mV	10 µA	60 V	1.3 W	160 hFE	TO-126-3 TO-225AA	5 A	150 °C
ON Semiconductor KSD1691GS	NPN	TO-126-3	Through Hole	300 mV	10 µA	60 V	1.3 W	200 hFE	TO-126-3 TO-225AA	5 A	150 °C
ON Semiconductor KSD1691YSTU	NPN	TO-126-3	Through Hole	300 mV	10 µA	60 V	1.3 W	160 hFE	TO-126-3 TO-225AA	5 A	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3

Technical documentation and resources