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DPAK_369C

Discrete Semiconductor Products

NDD60N550U1T4G

Obsolete

ON Semiconductor

POWER MOSFET 600V 8.2A 550MOHM SINGLE N-CHANNEL DPAK

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DocumentsDatasheet Package Drawing-369C-DPAK (SINGLE GAUGE) TO-252 +1

DPAK_369C

Discrete Semiconductor Products

NDD60N550U1T4G

Obsolete

ON Semiconductor

POWER MOSFET 600V 8.2A 550MOHM SINGLE N-CHANNEL DPAK

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DocumentsDatasheet Package Drawing-369C-DPAK (SINGLE GAUGE) TO-252 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NDD60N550U1T4G

Current - Continuous Drain (Id) @ 25°C	8.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	94 W
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NDD60N900U1 Series

Power MOSFET 600V 6.8A 745 mOhm Single N-Channel DPAK

Documents

Technical documentation and resources

Datasheet

Package Drawing-369C-DPAK (SINGLE GAUGE) TO-252

Package Drawing

Datasheet

NDD60N900U1 Series

Power MOSFET 600V 6.8A 745 mOhm Single N-Channel DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
ON Semiconductor NDD60N900U1-1G	-55 °C	150 °C	74 W	IPAK	4 V	900 mOhm	N-Channel	Through Hole	10 V	360 pF	12 nC	600 V	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	25 V	5.7 A
ON Semiconductor NDD60N550U1-35G	-55 °C	150 °C		IPAK	4 V		N-Channel	Through Hole	10 V	540 pF	18 nC	600 V	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	25 V	8.2 A	94 W
ON Semiconductor NDD60N360U1-35G	-55 °C	150 °C	114 W	IPAK	4 V	360 mOhm	N-Channel	Through Hole	10 V	790 pF	26 nC	600 V	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	25 V	11 A
ON Semiconductor NDD60N745U1-1G	-55 °C	150 °C	84 W	IPAK	4 V	745 mOhm	N-Channel	Through Hole	10 V			600 V	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	25 V	6.6 A
ON Semiconductor NDD60N900U1-35G	-55 °C	150 °C	74 W	IPAK	4 V	900 mOhm	N-Channel	Through Hole	10 V	360 pF	12 nC	600 V	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	25 V	5.7 A
ON Semiconductor NDD60N745U1T4G	-55 °C	150 °C	84 W	DPAK	4 V	745 mOhm	N-Channel	Surface Mount	10 V			600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	25 V	6.6 A
ON Semiconductor NDD60N360U1T4G	-55 °C	150 °C	114 W	DPAK	4 V	360 mOhm	N-Channel	Surface Mount	10 V	790 pF	26 nC	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	25 V	11 A
ON Semiconductor NDD60N745U1-35G	-55 °C	150 °C	84 W	IPAK	4 V	745 mOhm	N-Channel	Through Hole	10 V			600 V	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	25 V	6.6 A
ON Semiconductor NDD60N550U1T4G	-55 °C	150 °C		DPAK	4 V		N-Channel	Surface Mount	10 V	540 pF	18 nC	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	25 V	8.2 A	94 W