Discrete Semiconductor Products

HUF75542P3

Active

POWER MOSFET, N CHANNEL, 80 V, 75 A, 0.014 OHM, TO-220AB, THROUGH HOLE

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 80 V, 75 A, 0.014 OHM, TO-220AB, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	HUF75542P3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	180 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2750 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel UltraFET Power MOSFET 80V, 75A, 14mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	FET Type	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor HUF75542P3	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3	N-Channel	20 V	TO-220-3	4 V	2750 pF	10 V	230 W	Through Hole	75 A	80 V	180 nC	14 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.21
		10	$ 2.78
		100	$ 1.96
		500	$ 1.61
		1000	$ 1.50
Newark	Each	500	$ 1.65
ON Semiconductor	N/A	1	$ 1.60

General part information

N-Channel UltraFET Power MOSFET 80 V, 75 A, 14 mΩ

Technical documentation and resources