Discrete Semiconductor Products

RJK1002DPN-E0#T2

Obsolete

NCH SINGLE POWER MOSFET 100V 70A 7.6MOHM TO-220AB

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 100V 70A 7.6MOHM TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1002DPN-E0#T2

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6450 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 100V 70A 7.6Mohm To-220Ab

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK1002DPN-E0#T2	70 A	150 W	MOSFET (Metal Oxide)	100 V	150 °C	20 V	94 nC	6450 pF	TO-220AB	Through Hole	TO-220-3	10 V	N-Channel	7.6 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The RJK1002DPN-E0 is a Nch Single Power Mosfet 100V 70A 7.6Mohm To-220Ab.

Technical documentation and resources