Discrete Semiconductor Products

MJE5731A

Obsolete

PNP BIPOLAR POWER TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

PNP BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MJE5731A

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	375 V

PNP Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type
ON Semiconductor MJE5731A	1 mA	10 MHz	TO-220	TO-220-3	150 °C	-65 °C	1 A	Through Hole	40 W	1 V	30	375 V	PNP
ON Semiconductor MJE5731AG	1 mA	10 MHz	TO-220	TO-220-3	150 °C	-65 °C	1 A	Through Hole	40 W	1 V	30	375 V	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Bipolar Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.

Technical documentation and resources