Discrete Semiconductor Products

SI1330EDL-T1-GE3

LTB

MOSFET N-CH 60V 240MA SC70-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 240MA SC70-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI1330EDL-T1-GE3

Current - Continuous Drain (Id) @ 25°C	240 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	280 mW
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI1330EDL-T1-GE3	2.5 Ohm	240 mA	280 mW	-55 °C	150 °C	SC-70 SOT-323	3 V 10 V	SC-70-3	20 V	Surface Mount	0.6 nC	N-Channel	2.5 V	MOSFET (Metal Oxide)	60 V

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General part information

N-Channel 60 V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3

Technical documentation and resources