Discrete Semiconductor Products

ECH8320-TL-H

Obsolete

MOSFET P-CH 20V 9.5A SOT28FL

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 9.5A SOT28FL

Technical Specifications

Parameters and characteristics for this part

Specification	ECH8320-TL-H

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	SOT-28FL/ECH8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.3 V

Part	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor ECH8320-TL-H	P-Channel	1.3 V	10 V	Surface Mount	14.5 mOhm	2300 pF	150 °C	9.5 A	SOT-28FL/ECH8	25 nC	20 V	MOSFET (Metal Oxide)
ON Semiconductor ECH8320-TL-H	P-Channel		10 V	Surface Mount	14.5 mOhm	2300 pF	150 °C	9.5 A	8-ECH		20 V	MOSFET (Metal Oxide)	1.8 V 4.5 V	25 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 9.5A (Ta) 1.6W (Ta) Surface Mount SOT-28FL/ECH8

Technical documentation and resources

No documents available