Discrete Semiconductor Products

SUD42N03-3M9P-GE3

Obsolete

MOSFET N-CH 30V 42A TO252

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 42A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SUD42N03-3M9P-GE3

Current - Continuous Drain (Id) (Tc)	42 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	100 nC
Input Capacitance (Ciss) (Max)	3535 pF, 3535 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	2.5 W, 73.5 W
Rds On (Max)	3.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Technology	Package Name	Gate Charge (Max)	Package / Case	Rds On (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SUD42N03-3M9P-GE3	10 V	4.5 V	3535 pF 3535 pF	MOSFET (Metal Oxide)	TO-252AA	100 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.9 mOhm	N-Channel	-55 °C	150 °C	2.5 V	20 V	30 V	Surface Mount	2.5 W 73.5 W	42 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 42A (Tc) 2.5W (Ta), 73.5W (Tc) Surface Mount TO-252AA

Technical documentation and resources