Specification	NDFPD1N150CG

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds	80 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W, 2 W
Rds On (Max) @ Id, Vgs	150 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

NDFPD1N150C Series

N-Channel Power MOSFET, 1500V, 0.1A, 150Ω

Part	Power Dissipation (Max)	FET Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package
ON Semiconductor NDFPD1N150CG	2 W 20 W	N-Channel	150 °C	10 V	150 Ohm	TO-220-3 Full Pack	4.2 nC	80 pF	30 V	MOSFET (Metal Oxide)	1500 V	100 mA	Through Hole	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NDFPD1N150C is N-Channel Power MOSFET, 1500V, 0.1A, 150Ω, TO-220F-3FS.

Technical documentation and resources